The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 1986

Filed:

Nov. 02, 1983
Applicant:
Inventors:

Yasuhiko Nonaka, Mobara, JP;

Eisuke Inoue, Mobara, JP;

Keiichi Shidara, Tama, JP;

Kenkichi Tanioka, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
313366 ; 313386 ;
Abstract

A photoconductive image pick-up tube target comprises a transparent substrate, an N-type conductive film formed on the transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and containing Se, As and Te as sensitizer. The P-type photoconductive film includes a first layer contiguous to the N-type conductive film and containing 94.+-.1% by weight of Se and 6.+-.0.5% by weight of As, a second layer formed on the first layer and containing 64.+-.4% by weight of Se, 3.+-.0.5% by weight of As, and 33.+-.2% by weight of Te, a third layer formed on the second layer and containing Se and As, and a fluoride doped region extending over the first layer and a front half layer of the second layer and having a fluoride concentration of 0.1 to 3.0% by weight. The third layer has an As concentration which has a peak of 28.+-.1% by weight at a site contiguous to a rear half layer of the second layer and reduces gradually.


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