The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1986
Filed:
Sep. 04, 1984
Peter Tihanyi, Palo Alto, CA (US);
Robert S Bauer, Portola, CA (US);
Xerox Corporation, Stamford, CT (US);
Abstract
A method of making a facet coating for a semiconductor light emitting device, such as a semiconductor laser or the like, comprising the steps of depositing a thin layer of a reactive material on the cleaved facet to getter oxygen and other reactive contaminants therefrom, and controlling the thickness of the deposition to be sufficiently thick to react with an optimum amount of said contaminants but sufficiently thin in order that the reactive material is sufficiently consumed in the gettering process to render the thin layer electrically nonconductive if conductive in nature. The reactive material may be selected from the group consisting of Al, Si, Ta, V, Sb, Mn, Cr and Ti. Al has been found to be particularly good as a passivating layer with a preferred thickness for the layer being in the range of about 20 .ANG. to 75 .ANG., depending upon whether the layer is for purposes of surface passivation or interface passivation.