The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1986
Filed:
Oct. 12, 1984
Hiroyuki Sakai, Osaka, JP;
Kenji Kawakita, Osaka, JP;
Tsutomu Fujita, Osaka, JP;
Toyoki Takemoto, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The invention provides a method for manufacturing a semiconductor device, wherein a semiconductor substrate is vertically etched to form a groove, antioxidant insulating films are formed on the side walls of the groove, and local oxidation is performed. Lateral extrusion of an oxide film which is a so-called bird's beak and a projection of the oxide film which is a so-called bird's head are substantially eliminated. As a result, the active region of the transistor, that is, the element formation region may not be narrowed, providing high packing density and high precision. Furthermore, the surface of the semiconductor substrate is flattened to prevent short-circuiting and disconnections of wiring layers. Stable manufacturing process provides a high yield of the semiconductor device. Electrical characteristics of the semiconductor device are greatly improved.