The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1985
Filed:
Jul. 02, 1984
Masahiro Akiyama, Tokyo, JP;
Yoshihiro Akiyama, Tokyo, JP;
Agency of Industrial Science and Technology, Tokyo, JP;
Ministry of International Trade and Industry, Tokyo, JP;
Abstract
A method for the growth of a compound semiconductor comprises growing on a silicon substrate a polycrystalline layer of a desired Group III-V compound semiconductor or a crystal layer of the desired Group III-V compound semiconductor having inferior crystallinity, growing on the formed layer at least one layer of the same semiconductor as the desired Group III-V compound semiconductor and at least one layer of a Group III-V compound semiconductor having a lattice constant approximating the lattice constant of the desired Group III-V compound semiconductor, which layers are alternately disposed, and growing on the alternately disposed layers a layer of the desired Group III-V compound semiconductor.