The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1985
Filed:
Jun. 21, 1983
Hirofumi Namizaki, Hyogo, JP;
Ryoichi Hirano, Hyogo, JP;
Hideyo Higuchi, Hyogo, JP;
Etsuji Oomura, Hyogo, JP;
Yasushi Sakakibara, Hyogo, JP;
Wataru Susaki, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In order to prevent the output characteristic of a semiconductor laser from being saturated at higher temperatures due to the thyristor effect of a combination of the semiconductor layers thereof, an intermediate layer of a conductivity type the same as that of the substrate and opposite that of the first semiconductor layer is provided between the substrate and the first layer. Due to the relatively low carrier density of the intermediate layer, oscillation can be stably carried out even at higher temperatures without triggering the thyristor structure.