The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 1985

Filed:

Oct. 01, 1984
Applicant:
Inventors:

Karen H Brown, Yorktown Heights, NY (US);

David F Moore, Cambridge, GB;

Bernard J van der Hoeven, Jr, Pound Ridge, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 29591 ; 156652 ; 156656 ; 1566591 ; 1566611 ; 2041 / ; 357-5 ; 357 71 ; 427 89 ;
Abstract

This composite back-etch/lift-off stencil method avoids the uncontrolled changes in the properties of contacts in small devices caused by the close proximity of the lift-off resist stencil to the contact area during the precleaning, surface preparation and metal deposition processes. This method limits the area of the wafer exposed to back-etching and thus restores the freedom of choice of contact metallurgy. Back-etching is only applied in the areas of the wafer near to the contact holes; lift-off techniques are used for the rest of the integrated circuit.


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