The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1985
Filed:
Aug. 07, 1984
Kiyoho Kamei, Yokohama, JP;
Kabushiki Kaisha Toshiba, , JP;
Abstract
A process for fabricating a field effect transistors having a source electrode, a drain electrode and a gate electrode, including the steps of forming first to third conjoined narrow portions of thin film on an active region of a semiconductor, the second thin film portion having a different etching rate from the first and third and implanting ions into the active region to form a high carrier concentration region by using the conjoined films as a mask. The thickness of the second film portion determines the gate electrode length and the thickness of the third film portion determines the distance between the high carrier concentration region at the source side and the gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile