The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1985
Filed:
May. 09, 1983
Yoshinori Hayafuji, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, a beam of charged particles is impacted and focused on the polysilicon layer, the substrate and beam are relatively displaced so that the beam of charged particles scans at least a portion of the polysilicon layer in the direction in which the seeding locations are spaced apart, the speed with which the beam relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the area of impact thereon for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations, and charge buildup on the layer of silicon dioxide is avoided to prevent interference with focusing of the beam.