The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1985
Filed:
Aug. 27, 1982
Applicant:
Inventors:
Johannes A dePoorter, Eindhoven, NL;
Peter J deWaard, Eindhoven, NL;
Rudolf P Tijburg, Eindhoven, NL;
Gerardus L Dinghs, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 44 ; 372 46 ; 372 49 ; 357 17 ;
Abstract
A semiconductor laser having mirror faces serving as resonators, in which the active laser region includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces, so that mirror erosion is avoided.