The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1985
Filed:
May. 30, 1984
Applicant:
Inventors:
Paul Saunier, Garland, TX (US);
Hung-Dah Shih, Plano, TX (US);
Assignee:
Texas Instruments Inc., Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 16 ;
Abstract
A multiple high electron mobility transistor structure without inverted heterojunctions is disclosed. Multiple normal heterojunctions of doped aluminum gallium arsenide grown on gallium arsenide without alternating inverted heterojunctions of gallium arsenide grown on doped aluminum gallium arsenide is achieved by grading undoped aluminum gallium arsenide from the doped aluminum gallium arsenide to the gallium arsenide to avoid an inverted heterojunction.
Saunier, Paul. (1985). Multiple high electron mobility transistor structures without inverted (U.S. Patent No. 4558337). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4558337
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile