The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1985
Filed:
Sep. 20, 1984
Yasoji Suzuki, Yokosuka, JP;
Kenji Matsuo, Yokohama, JP;
Abstract
Disclosed is a complementary MOSFET logic circuit having a complementary MOS inverter with a pregiven ratio of the channel widths of a P channel MOSFET and an N channel MOSFET and pregiven threshold voltages of the FETs so as to have an input voltage characteristic adapted to an output voltage characteristic, and a buffer circuit which includes a bipolar transistor for receiving at the base thereof a signal from the output terminal of the complementary MOS inverter and an N channel MOSFET for receiving at the gate thereof an input signal applied to the complementary MOS inverter. The inverter and buffer are connected in series to one another between a high potential applying point and a low potential applying point, and a signal corresponding to a logic output signal of the complementary MOS inverter is produced at the output terminal thereof.