The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1985
Filed:
Jul. 05, 1983
Yoshinori Imamura, Hachioji, JP;
Saburo Ataka, Tokyo, JP;
Yukio Takasaki, Hachioji, JP;
Yasuo Tanaka, Kokubunji, JP;
Tadaaki Hirai, Koganei, JP;
Eiichi Maruyama, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.