The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1985
Filed:
Oct. 19, 1983
Kyong M Kim, Hopewell Junction, NY (US);
Pavel Smetana, Poughkeepsie, NY (US);
Gunther H Schwuttke, Scottsdale, AZ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An apparatus and method are described for incorporating doping material into a single silicon crystal by an improved float zone (FZ) crystal growth method. A solid fused silica doping rod is inserted into a floating zone of molten silicon in a controlled manner, preferably via a generally radial hole through a radio-frequency induction coil. Oxygen doping, in a concentration of 1-25 ppm, is achieved by using a fused silica doping rod. N- or p-type dopants may be contained in the silica rod as impurities to provide n- or p-type doping concurrently with the oxygen doping.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile