The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 1985

Filed:

Aug. 22, 1984
Applicant:
Inventor:

Arrigo Addamiano, Alexandria, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 148D / ; 156610 ; 156611 ; 156613 ; 156D / ; 423345 ;
Abstract

A method of making very pure cubic silicon carbide, SiC, comprising the steps of: loading a first inner graphite cup of a Lely type furnace while cold with a large number of crystals of SiC that are used as substrates; sealing the first cup with a graphite lid; inserting the first cup into a second graphite cup and inserting them into the furnace; filling the area between the first cup and the second cup with SiC; heating the first cup to between 2300.degree. C. and 2700.degree. C. until an atmosphere saturated with Si, C, SiC.sub.2 and Si.sub.2 C is created; and cooling the furnace quickly to a temperature less than 1800.degree. C.


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