The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1985
Filed:
Jun. 20, 1983
John M Gibson, Upper Montclair, NJ (US);
Dale C Jacobson, Independence Township, Warren County, NJ (US);
John M Poate, Summit, NJ (US);
Raymond T Tung, Berkeley Heights, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A method for forming heterostructures comprising multiconstituent epitaxial material, on a substrate comprises formation of a layer of 'precursor' material on the substrate, and momentarily melting the precursor material by pulsed irradiation. The precursor material has the same major chemical constituents as the multiconstituent material to be formed, albeit not necessarily in the same proportions. In at least some systems (e.g., nickel or cobalt silicides on Si), solid state annealing of the re-solidified material often improves substantially the quality of the epitaxial material formed, resulting in substantially defect-free, substantially monocrystalline, material. An exemplary application of the inventive method is the formation of single crystal epitaxial NiSi.sub.2 on Si(100).