The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1985
Filed:
Mar. 02, 1984
Applicant:
Inventors:
Jan Haisma, Eindhoven, NL;
Poul K Larsen, Eindhoven, NL;
Tim De Jong, Nijmegen, NL;
Johannes F Van der Veen, Bussum, NL;
Willem A Douma, Gaborono, BW;
Frans W Saris, Amsterdam, NL;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 2957 / ; 148-15 ; 148174 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 156612 ; 156D / ; 156D / ; 156D / ; 156D / ;
Abstract
A monocrystalline layer of one semiconductor material is grown onto a surface of a monocrystalline semiconductor body by means of molecular beam epitaxy. During such growth, the semiconductor body is kept at such a low temperature that a non-monocrystalline layer is obtained. The non-monocrystalline layer is then converted by a heat treatment into a monocrystalline form. Accordingly, an abrupt junction between the two semiconductor materials is obtained.