The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 1985
Filed:
Jul. 26, 1984
Applicant:
Inventors:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ;
U.S. Cl.
CPC ...
427 66 ; 2041 / ; 427 64 ; 427 70 ;
Abstract
A method of electroluminescent panel manufacture in which a doped zinc chalcogenide phospher film--for example manganese doped zinc sulphide, is deposited upon an electrode bearing substrate in the presence of a hydrogen enriched atmosphere--for example a 90%:10% argon:hydrogen atmosphere. This is followed by rapid anneal treatment, the substrate being raised quickly to a temperature of 450.degree. C., or greater, and cooled rapidly. It is preferable that, prior to film deposition, the substrate is pretreated by baking in the hydrogen enriched atmosphere. An additional current density limiting film may be applied--a film of low resistance cermet material--for example silica/nickel 20% Ni in SiO.sub.2, or a film of amorphous silicon.