The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1985
Filed:
Jun. 06, 1983
Masayoshi Suzuki, Tokyo, JP;
Kazuhide Saigo, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of forming fine patterns in the manufacture of microelectronic devices by using optical or electron-beam lithography and a dry etching technique such as reactive sputter etching with oxygen. The substrate surface is covered with a relatively thick organic layer, and a thin resist film is formed thereon. The material of the resist layer is a polymer or copolymer comprising trialkylsilyl group, dimethylphenylsilyl group or trialkoxysilyl group. The thickness of the resist film is so adjusted as to contain a sufficient number of trialkylsilyl, dimethylphenylsilyl or trialkoxysilyl groups per unit area of the resist pattern to thereby ensure high endurance of the resist to dry etching for etching the thick organic layer.