The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1985
Filed:
Sep. 25, 1984
Eiichi Iizuka, Shiojiri, JP;
Tomoji Sando, Shiojiri, JP;
Shinji Kashima, Shiojiri, JP;
Masakazu Maki, Shiojiri, JP;
Showa Denko Kabushiki Kaisha, Tokyo, JP;
Abstract
Cubic boron nitride crystals are grown by subjecting reaction materials of low pressure phase boron nitride, a solvent material, and cubic boron nitride seeds to pressure and temperature conditions in the cubic boron nitride-stable region. The reaction materials are in the form of a pair of a superimposed solvent material plate and a low pressure phase boron nitride plate or a pile made of a plurality of the pairs of the superimposed solvent material plate and low pressure phase boron nitride plate, and a plurality of the seeds are disposed on either one or each of the confronting surfaces of the pair of the superimposed solvent material plate and low pressure phase boron nitride plate. Alternatively, the reaction materials are in the form of a plate made of a mixture of the solvent material and the low pressure phase boron nitride or a pile made of a plurality of the mixture plates, and a plurality of the seeds are disposed on a surface of each plate. The seeds have a particle size of not larger than 150 .mu.m and are regularly disposed in such a manner that the seeds are located at a substantially equal distance and the distance between the peripheries of every two adjacent grown cubic boron nitride crystal particles is from 20 to 200 .mu.m. The cubic boron nitride crystals are allowed to grow until their sizes reach at least 1.5 times the size of the seeds.