The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 1985

Filed:

Jun. 06, 1983
Applicant:
Inventors:

Thomas N Jackson, Peekskill, NY (US);

Peter D Kirchner, Crompond, NY (US);

George D Pettit, Mahopac, NY (US);

James J Rosenberg, Bronx, NY (US);

Jerry M Woodall, Bedford Hills, NY (US);

Steven L Wright, Yorktown Heights, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ; C30B / ;
U.S. Cl.
CPC ...
428136 ; 118726 ; 156610 ; 156D / ; 148D / ;
Abstract

A quantity of silicon serving as a source of the element silicon for use in a molecular beam epitaxial growth apparatus where the silicon is in the form of a monocrystalline wafer with a plurality of electrically parallel filaments separated by slots that pass completely through the wafer, each filament having a length dimension that is greater than the width and height dimensions, joined at a broad contact area at each filament end and where an electric current is passed through the filaments through the broad contact areas.


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