The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1985
Filed:
Aug. 29, 1984
Takeo Kondo, Yokosuka, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
A semiconductor device comprises a semiconductor substrate of N conductivity, a semiconductor well of P conductivity type, a first semiconductor region of P conductivity type formed in the substrate, the first semiconductor region forming a source region or a drain region in a first MOS transistor of P channel type, a second semiconductor region of N conductivity type formed in the well, the second semiconductor region forming a source region or a drain region in a second MOS transistor of N channel type, and a third semiconductor region of P conductivity type for partially covering the peripheral and bottom surfaces of said second region, which are in the proximity of a boundary defined between the substrate and the well, the third semiconductor region having an impurity concentration higher than that of the well.