The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 1985

Filed:

Aug. 01, 1984
Applicant:
Inventors:

Eugene D Savoye, Lancaster, PA (US);

Charles M Tomasetti, Leola, PA (US);

Assignee:

RCA Corporation, Princeton, NJ (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29572 ; 313367 ; 357 31 ; 148D / ; 148D / ; 148D / ;
Abstract

An imaging device includes a wafer of single crystal semiconductor material having a first surface with an input surfacing region which extends into the wafer from the first surface and a second surface with a charge storage portion which includes a plurality of discrete charge storing regions which extend into the wafer of the second surface. The wafer includes a potential barrier within the input signal sensing portion for controlling blooming. The wafer is improved by including a passivation region within the input sensing portion for stabilizing the energy level of the conductivity band of the minority carriers at the Fermi energy level of the semiconductor wafer. Additionally, an electrical leakage reduction region extends into the wafer from the second surface. The leakage reduction region is contiguous with each of the discrete charge storage regions.


Find Patent Forward Citations

Loading…