The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 1985
Filed:
Mar. 22, 1982
Bernard P Roger, Carpiquet, FR;
Bernard Vertongen, Caen, FR;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor device having in a semiconductor body a Darlington amplifier comprising a vertical enhancement VMOS-transistor (T.sub.1) as input transistor and a vertical bipolar power transistor (T.sub.2) as output transistor. In order to increase the switching speed, a lateral enhancement MOS transistor (T.sub.3) of complementary conductivity type to the first transistor (T.sub.1) is connected in parallel with the emitter-base junction of the bipolar output transistor (T.sub.2). The gate electrodes of the first and second transistors are interconnected and associated with an input terminal E. Double and treble epitaxial layer structures are disclosed for integrating the device in the semiconductor body. The lateral third transistor (T.sub.3) may be provided either within or outside the area of an epitaxial layer forming the emitter zone of the second transistor (T.sub.2).