The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 1985
Filed:
Jun. 26, 1984
Shiro Hine, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Semiconductor layers are selectively epitaxially grown in portions having an insulating film removed which is formed on a substrate by selective epitaxial growth under reduced pressure. With respect to a circumferential region outwardly of the removed portions in which the semiconductor elements are to be provided, there are formed one or more removed portions (dummy portions) in which no semiconductor element is provided, thereby making arrangement of the removed portions as even as possible with respect to the entire surface of the insulating film, to overcome position dependency in flatness of the semiconductor layers to be obtained. The semiconductor layers grown in the dummy portions may be left not to have semiconductor elements formed therein.