The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 1985
Filed:
Apr. 11, 1983
Applicant:
Inventor:
Alexander J Shuskus, West Hartford, CT (US);
Assignee:
United Technologies Corporation, Hartford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 52 ; 357-2 ; 357 2315 ; 357 61 ; 357 73 ; 501 40 ;
Abstract
A semiconductor article having a phosphorous nitrogen passivating film thereon. Particularly, an insulated gate field effect transistor device operating in the inversion mode, wherein the device comprises an essentially oxygen-free, amorphous, phosphorous-nitrogen glass passivating film deposited on a III-V semiconductor material.
Shuskus, Alexander. (1985). Phosphorous-nitrogen based glasses for the passivation of iii-v (U.S. Patent No. 4546372). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4546372
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile