The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 1985
Filed:
Nov. 08, 1982
Applicant:
Inventors:
Sandor L Lehoczky, Huntsville, AL (US);
Frank R Szofran, Huntsville, AL (US);
Assignee:
McDonnell Douglas Corporation, St. Louis, MO (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566 / ;
Abstract
A method of preparing pseudobinary mercury, cadmium, telluride (HCT) crystals by controlled crystal growth in a fused silica ampule uses a modified Bridgman-Stockbarger method. In this method, the alloy is cast into one end of the ampule, inverted, heated to a temperature between the liquidus and solidus temperatures of the alloy and directionally solidified in a two zone furnace. The parameters of the solidification treatment are controlled according to the formula
Lehoczky, Sandor. (1985). Hct crystal growth method (U.S. Patent No. 4545848). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4545848
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile