The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 1985
Filed:
Sep. 07, 1984
Henricus G Maas, Eindhoven, NL;
Francois M Klaassen, Eindhoven, NL;
Johannes A Appels, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a field effect device is set forth where the source and drain zones have extensions of an accurately and reproducibly determined length adjoining the gate electrode. According to the present invention, an oxygen-preventing insulating layer is formed on a first silicon layer forming the gate electrode, and a second silicon layer is provided on the oxygen-preventing layer. A part of the second silicon layer is removed and the edges substantially coincide with the edges of the gate electrode to be formed. The edges of the remaining part of the second silicon layer are oxidized. Through successive maskless selective etching steps, the first silicon layer is exposed and etched away at the area of the oxidized etched portions. The extensions of the source and drain zones are implanted through the openings thus obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile