The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1985
Filed:
Apr. 16, 1984
Yalcin Ayasli, Lexington, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A distributed power amplifier includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, such FETS having cascaded gate electrodes and cascaded drain electrodes successively coupled between an input terminal and an output terminal. The gate electrode of each one of the successively coupled FETS is coupled to the input terminal through a corresponding one of a plurality of capacitors, and a common bias source through one of a corresponding plurality of high impedance bias paths. Since the gate electrodes of each FET are coupled to the input terminal through a capacitor, the coupling capacitor in combination with the inherent capacitance of each FET provides a potential divider into each gate electrode. Therefore, the power fed to each gate electrode is selected by selecting the value of capacitance for the coupling capacitors. In an alternate embodiment, a pair of sets of such capacitively coupled FETS is provided with the drain electrodes of each set of such FETS being coupled to a common output r.f. transmission line.