The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1985
Filed:
Jun. 18, 1984
Tsutomu Yatsuo, Hitachi, JP;
Masayoshi Naito, Katsuta, JP;
Takahiro Nagano, Hitachi, JP;
Tomio Yasuda, Hitachi, JP;
Jin Onuki, Hitachi, JP;
Mitsuo Yanagi, Hitachi, JP;
Fumio Sato, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external control signal to a gate electrode takes the form of a closed-loop shape and the majority of emitter regions are arranged on both sides of the loop. This arrangement ensures that the individual emitter regions, even when the number of the emitter regions is increased to a great extent, can be applied with a uniform control signal, thereby preventing degradation of the turn-off characteristics.