The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1985
Filed:
Aug. 08, 1983
Kuey-Yeou Tsao, Barrington, IL (US);
Gould, Inc., Rolling Meadows, IL (US);
Abstract
A method is described for treating the surface of a field-effect transistor or a Schottky barrier diode. A polysilicon surface of a gate region of an FET or a single crystalline silicon surface of a Schottky barrier diode may be treated with a low-power argon-plasma for a relatively short period of time to enhance nucleation sites on the surface of the polysilicon or single crystalline silicon. A layer of tungsten or molybdenum may be selectively deposited on the surface of the polysilicon or single crystalline silicon by chemical-vapor deposition through silicon reduction of tungsten hexafluoride or molybdenum hexafluoride.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile