The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1985
Filed:
Dec. 27, 1984
Yasuhisa Sugo, Yokohama, JP;
Tohru Takeshima, Tokyo, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
A semiconductor memory device in which a bipolar memory cell includes two cross-coupled transistors. The collector load is a Schottky barrier diode. A capacitor is formed to be connected to the Schottky barrier diode. The capacitor is formed by a junction between a P.sup.+ -type diffusion region and an N.sup.+ -type buried layer functioning as a collector of the transistor. The P.sup.+ -type diffusion region is formed in the periphery of the Schottky barrier diode and between a metal layer connected to a word line and the N.sup.+ -type buried layer. By the capacitor, the stability of the memory holding state is improved without deteriorating the operating speed of the memory cell.