The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1985
Filed:
May. 20, 1983
Applicant:
Inventor:
Masakazu Kakumu, Yokohama, JP;
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 29591 ; 148187 ; 148188 ; 148189 ; 148190 ;
Abstract
In a method of forming electrodes or wiring structures in a semiconductor device, metal and metal silicide are used for electrodes and lead wires, impurities are doped into the interface of a semiconductor substrate from the surface by gas diffusion or solid diffusion irrespective of the thickness, and in the case where the base material is an insulating material, the impurities are not doped into the semiconductor region side by self-alignment.