The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1985
Filed:
Oct. 05, 1984
Applicant:
Inventors:
Pane-Chane Chao, Ithaca, NY (US);
Walter H Ku, Ithaca, NY (US);
Assignee:
Cornell Research Foundation, Inc., Ithaca, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 29579 ; 29591 ; 357 15 ; 148D / ;
Abstract
A method of fabricating MESFET devices having a T-shaped gate electrode is disclosed. The method includes the formation of a single layer of resist material on a semiconductor surface; formation of a resist cavity through optical lithography, the cavity exposing a selected portion of the semiconductor surface; depositing by way of dual-angle evaporation gate walls within said resist cavity, the gate walls defining a T-shaped gate cavity; depositing gate electrode material within the gate cavity, removing the resist material, and removing the gate walls from the gate electrode material.