The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1985
Filed:
Mar. 07, 1983
Applicant:
Inventor:
Ingrid E Magdo, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 148175 ; 148187 ; 357 34 ; 357 91 ;
Abstract
A PNP semiconductor device and a manufacturing method therefore. In the method, a window is formed on the surface of a semiconductor substrate having an N-type base region formed therein. A polycrystalline layer is formed on the base region in the window. The polycrystalline silicon layer is ion implanted under specific predetermined conditions with a P-type doping ion. The P-type doping ion is diffused by an annealing treatment under predetermined conditions into the base region to form a shallow emitter region.