The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1985
Filed:
Jun. 25, 1982
Applicant:
Inventors:
Alfred Y Cho, Summit, NJ (US);
Bernard Glance, Colts Neck, NJ (US);
Daniel Lubzens, Haifa, IL;
Martin V Schneider, Holmdel, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29580 ; 148187 ;
Abstract
A metal gate field effect transistor has its source and drain located on one major surface of a gallium arsenide layer, while its gate electrode forms a Schottky barrier contact to an opposed major surface of the layer in a self-aligned relationship to the source and drain.