The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 1985

Filed:

Dec. 20, 1982
Applicant:
Inventor:

Takeo Kondo, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 13 ; 357 20 ; 357 42 ; 357 52 ;
Abstract

A method is provided by the present invention for manufacturing a semiconductor device which includes supplying an impurity for forming an impurity area in a semiconductor substrate wherein the amount of the impurity defining the corners of said area is adjusted so that the shape of said corners is controlled. In this method, adjustment of the amount of the impurity may be accomplished by supplying the impurity to said substrate by using a mask whose corners are enlarged or reduced for increasing or reducing the opening area of the mask. The adjustment of the amount of the impurity may alternatively be accomplished by supplying an impurity of conductivity type opposite to that of said impurity to the places where the corners are to be formed.


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