The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1985
Filed:
Oct. 17, 1983
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 148174 ; 148D / ; 148D / ; 156612 ; 156614 ; 156D / ; 427 87 ; 118720 ; 118725 ; 118730 ;
Abstract
A layer of a compound semiconductor having good quality is formed by disposing a substrate in an epitaxial growth layer, feeding a second reactant gas through a guide member extending from the downstream side to the upstream side of the flow of a first reactant gas, mixing the first reactant gas and second reactant gas, and supplying the resultant gaseous mixture of the first and second reactant gases onto the substrate.