The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 1985

Filed:

Aug. 19, 1982
Applicant:
Inventors:

Shuichi Kameyama, Yokohama, JP;

Satoshi Shinozaki, Yokohama, JP;

Hiroshi Iwai, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29578 ; 29580 ; 148D / ; 148D / ; 156643 ; 156648 ; 156653 ; 156657 ; 357 50 ;
Abstract

A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.


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