The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 1985

Filed:

Mar. 09, 1982
Applicant:
Inventors:

Yoshihiro Takemae, Yokohama, JP;

Tomio Nakano, Kawasaki, JP;

Tsuyoshi Ohira, Yokohama, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365230 ; 365189 ;
Abstract

In a semiconductor memory device including an output buffer circuit receiving data signals read out from a memory cell array, an output stage MOS transistor being turned ON and OFF according to the output signals of the output buffer circuit, and an output buffer enable (OBE) signal generator circuit for generating an OBE signal which is used as the voltage supply to the output stage of the output buffer circuit, a V.sub.BS voltage generator circuit is provided for generating a voltage V.sub.BS higher than the voltage source V.sub.CC preceding the rising up of the OBE signal, which voltage V.sub.BS is used as a voltage supply to the output stage of the OBE signal generator circuit, whereby the OBE signal is formed as a voltage waveform which rises rapidly up to a level higher than the voltage source V.sub.CC.


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