The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1985
Filed:
Feb. 27, 1984
Applicant:
Inventors:
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03G / ;
U.S. Cl.
CPC ...
430128 ; 427 39 ; 427 451 ; 427 86 ; 430133 ;
Abstract
A method of forming an amorphous silicon film includes the steps of bringing a gas which is pre-excited by electron cyclotron resonance generated by an alternating electric field and a magnetic field into contact with a raw material gas containing silicone atoms in a reaction chamber in which a substrate is placed, so that the raw material gas is converted to radicals, and forming an amorphous silicon film on a surface of the substrate by the reaction of radicals therewith. Microwaves can be used as the alternating electric field.