The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 1985

Filed:

Apr. 10, 1984
Applicant:
Inventor:

Lawrence K White, W. Windsor Township, Mercer County, NJ (US);

Assignee:

RCA Corporation, Princeton, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ; B29C / ;
U.S. Cl.
CPC ...
156643 ; 156651 ; 156652 ; 156653 ; 156655 ; 156657 ; 1566591 ; 156668 ; 427 90 ; 430315 ; 430317 ;
Abstract

An improved method of forming a patterned layer of metallization on a substrate having topographical features is provided. A layer of a polymeric lift-off material is initially spin-coated onto the substrate, and a layer of a polymeric planarizing material spin-coated thereover. The dry etch rate of the lift-off layer is at least 1.2 times faster than that of the planarizing layer thereby forming a reverse slope wall profile in openings etched through both layers. A patterned hardmask layer is suitably used to dry etch the planarizing and lift-off layers, preferably in an oxygen-containing plasma. A layer of metallization is then deposited thereon. The metal in the openings is discontinuous from that deposited over the hardmask because of the reverse slope wall profile of the openings in the planarizing layers. The structure is then contacted with an organic solvent which penetrates to the base of the lift-off layer, again due to the reverse slope wall profile. The entire structure can thereupon be lifted from the substrate leaving the patterned metallization.


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