The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1985
Filed:
Jul. 12, 1982
Takamasa Sakai, Tokyo, JP;
Shoichi Minagawa, Tokyo, JP;
Clarion Co., Ltd., Tokyo, JP;
Abstract
Variable capacitance device consisting of a semiconductor substrate having a first conductivity type semiconductor layer, at least one second conductivity type semiconductor region formed in a surface portion of said first conductivity type semiconductor layer, and a barrier for generating a depletion layer formed on the surface opposite to said surface portion of said first conductivity type semiconductor layer, in which a capacitance reading-out section is disposed on said at least one second conductivity type semiconductor region. A depletion layer control section is disposed on said surface opposite to said surface portion; and said depletion layer control section is reversely biased so that said depletion layer extends from said barrier to a junction portion between said first conductivity type semiconductor layer and said at least one second conductivity type semiconductor region, whereby a capacitance variation results at said capacitance reading-out section in response to variation of the reverse bias voltage.