The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1985
Filed:
Jul. 28, 1983
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A chain amplifier assembly, includes a semiconductor body, a chain amplifier disposed in the semiconductor body and having an input, an output, a plurality of interconnected amplifier stages having transition regions therebetween, each of the stages including a plurality of field-effect transistors having source, gate and drain terminals, each of the source terminals being connected to a given common source potential, a plurality of ohmic resistors and inductances connected in series between the gate terminals forming a gate line, a plurality of capacitances each having a lead connected in parallel to the gate line and another lead connected to the given common source potential, a plurality of inductances connected in series between the drain terminals forming a drain line, a plurality of additional ohmic resistors having a lead connected in parallel to the drain line and another lead connected to the given common source potential, a plurality of additional capacitances having a lead connected in parallel to the drain line and another lead connected to the given common source potential, matching elements in the form of capacitances, inductances and ohmic resistors connected at the input, output and transition regions, the drain and gate lines being wave guides formed with metal coatings, insulating coatings and doping concentrations required for the field-effect transistors, and additional circuit elements monolithically integrated into the semiconductor body.