The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1985
Filed:
Feb. 24, 1984
Applicant:
Inventor:
John McGill, Rochester, MI (US);
Assignee:
Energy Conversion Devices, Inc., Troy, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136256 ; 29572 ; 136249 ; 136258 ; 357 30 ; 357 52 ; 427 74 ;
Abstract
Disclosed is an improved dual layer anti-reflective coating for use in a photoresponsive semiconductor device, and a device incorporating the coating. The coating has a uniformly low parasitic absorbance in the range of about 475 to 600 nanometers. The dual layer has an incident light layer and an intermediate layer. The intermediate layer is formed of a silicon alloy material having at least one band gap widening element incorporated therein. The index of refraction of the intermediate layer has an index of refraction intermediate the indexes of the incident light layer and the underlying photoresponsive semiconductor device.