The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1985
Filed:
Feb. 09, 1983
Applicant:
Inventors:
Assignee:
Jun-Ichi Nishizawa, Sendai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148171 ; 148172 ; 148188 ; 148189 ; 252 / ; 2956 / ;
Abstract
A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained by relying on a crystal growth method in liquid phase using a temperature difference technique, and subjecting this crystal to a thermal annealing in a Zn solution or in a Zn atmosphere to produce an n type region. Crystal growth is conducted while controlling the vapor pressure of the constituent Group IVB element to produce a p type region. A combination of all these steps gives a more stable pn junction.