The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1985
Filed:
Oct. 21, 1983
Tadashi Kiriseko, Kanagawa, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of producing a semiconductor device, including a bipolar transistor and a Schottky barrier diode (e.g., an SBD transistor), includes the steps of selectively etching an insulating layer formed on an N-type silicon epitaxial layer so as to form an emitter electrode contact window; and forming a polycrystalline silicon layer on the exposed portion of a P-type base region in the window. The method further includes the steps of introducing N-type impurities into the P-type base region through the polycrystalline silicon layer in the window, selectively etching the insulating layer so as to form a base electrode contact window and a contact window for the electrode of the SBD and carrying out a heat treatment for redistribution of the introduced impurities so as to form an emitter region. An emitter electrode is then formed on the polycrystalline silicon layer and the electrode of the SBD is formed directly on the silicon epitaxial layer.