The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 1985

Filed:

May. 09, 1983
Applicant:
Inventors:

William H Cochran, Rochester, MN (US);

Philip T Wu, Rochester, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365102 ; 365178 ; 365184 ;
Abstract

A single-FET-per cell read/write memory having capacitor storage elements also contains a pattern of fixed, latent data represented by ion implants in some of the FETs. This pattern is loaded into the capacitors by addressing the cells with a voltage between the thresholds of the normal and the implant-modified FETs, so that some of the capacitors are discharged and others are not. Thereafter, the data may be read out, or overwritten with variable data, by addressing the cells with a voltage higher than both thresholds.


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