Two-dimensional solid-state image sensor device

Abstract

A two-dimensional solid-state image sensor device comprising a plurality of picture cells two-dimensionally arranged in column and row directions. Each cell has a static induction transistor having drain and source regions disposed on opposite sides of a high resistance semiconductor channel region, and a gate region adjacent to the channel region to control a current flowing between the drain and source regions, and a transparent electrode disposed via a capacitance on at least a portion of the gate region, in a manner that light is incident through the transparent electrode to the gate region in which the charge produced by the light excitation is stored to control the current. Selection lines connected to the gate regions in each column in common via the capacitances are sequentially selected. A readout pulse voltage is applied to the selected selection line during one horizontal scanning period and a refresh pulse voltage larger than the readout pulse voltage is applied to the selected selection line during one horizontal blanking period subsequent to the horizontal scanning period. Each picture cell is selected in the column and row directions so that a signal is read out therefrom.