The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1985
Filed:
May. 22, 1984
Applicant:
Inventor:
Thomas Vlasak, Birr, CH;
Assignee:
BBC Brown, Boveri & Cie, Baden, CH;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148189 ; 118500 ;
Abstract
A method for the locally selective doping of a planar substrate, essentially made of silicon, for the production of semiconductors using a diffusion process, in which aluminum as the doping additive is applied by vaporizing in a vacuum at temperatures above 500.degree. C. to the substrate surface areas to be doped and permitted to diffuse into the substrate. A part of the substrate surface is masked in order to prevent the doping of the substrate beneath the mask, by forming a SiO.sub.2 layer on the substrate and abutting a masking plate against the SiO.sub.2 layer.