The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1985
Filed:
Apr. 09, 1984
Noboru Tsuya, Sendai, JP;
Kenichi Arai, Sendai, JP;
Other;
Abstract
A novel thin ribbon wafer of semiconductor having a polycrystalline structure composed of more than 50% of a grain having a grain size of more than 5 .mu.m, a thickness of 5 to 200 .mu.m, sufficient flexibility to be windable on a pipe having a diameter of 34 mm, malleability, and composed from p-type, i-type or n-type semiconductor material, and the composite clad of at least two elements thereof so as to form a p-n type junction. The composition of said semiconductor material consists of pure silicon or silicon with additional elements for improving the properties of a semiconductor; said additional element being at least one element in a proportion of less than 10 atomic % as compared to said silicon, said element selected from the group consisting of non-metallic elements such as hydrogen, phosphorus, sulfur and oxygen; semi-metallic elements such as boron, arsenic, tellurium, tin and selenium; metallic elements such as aluminum, gallium, indium, chromium, silver, iron and bismuth; and mixtures thereof with at least one element having smaller solubility limit than that of silicon. A method of manufacturing a thin ribbon wafer of composite clad of semiconductor material is also disclosed. Said flexible thin ribbon wafer of semiconductor is available for use as/or in a semiconductor electronic device.